NTE2402 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier

NTE2402 (NPN) & NTE2403 (PNP)
Silicon Complementary Transistors
Low Noise, UHF/VHF Amplifier
Description:
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type
surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir-
cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran-
sistors feature low intermodulation distortion and high power gain. Due to very high transition fre-
quency, these devices also have excellent wideband properties and low noise up to high frequencies.
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
DC Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (T_A ≤ +60°C, Note 1), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
DC Current Gain
Transition Frequency
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
I_CBO
h_FE
f_T
C_c
C_e
C_re
V_CB = 10V, I_E = 0
V_CE = 10V, I_C = 14mA
V_CE = 10V, I_C = 14mA, f = 500MHz
V_CB = 10V, I_E = Ie = 0, f = 1MHz
V_EB = 0.5V, I_C = I_c = 0, f = 1MHz
V_CE = 10V, I_C = 2mA, f = 1MHz,
T_A = +25°C
– – 50 nA
25 50 –
– 5 – GHz
– 0.75 – pF
– 0.8 – pF
– 0.4 – pF