NTE238 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Color TV, Horizontal Output

NTE238
Silicon NPN Transistor
Color TV, Horizontal Output
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.
Features:
D V_CEX = 1500V
D Safe Operating Area @ 50µs = 20A, 400V
Absolute Maximum Ratings;
Collector–Emitter Voltage, V_CEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current–Continuous, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current–Continuous, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current–Continuous, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), T_L . . . . . . . . . +275°C
Electrical Characteristics: (T_C =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V_CEO(sus)
I_CES
I_EBO
V_C = 50mA, I_B = 0
V_CE = 1500V, V_BE = 0
V_BE = 5V, I_C = 0
Collector–Emitter Saturation Voltage
Base Emitter Saturation Voltage
SWITCHING CHARACTERISTICS
V_CE(sat) I_C = 5A, I_B = 1A
V_BE(sat) I_C = 5A, I_B = 1A
Fall Time
t_f
I_C = 5A, I_B1 = 1A, L_B = 8µH
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
Min Typ Max Unit
750 – –
V
– – 0.25 mA
– – 0.1 mA
– – 5.0 V
– – 1.5 V
– 0.4 1.0 µs