 English |
|
|
|
|
|
|
|
| NTE2353 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode | |||
| |||
|
NTE2353
Silicon NPN Transistor
TV Horizontal Deflection Output
w/Damper Diode
Features:
D High Speed: tf = 100nsec
D High Breakdown Voltage: VCBO = 1500V
D OnâChip Damper Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICES VCE = 1500V
â â 1.0 mA
ICBO VCB = 800V
â â 10 µA
Collector Sustain Voltage
VCEO(sus) IC = 100mA, IB = 0
800 â â V
Emitter Cutoff Current
IEBO VEB = 4V
40 â 130 mA
Collector Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 1.6A
ââ5V
Base Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 1.6A
â â 1.5 V
DC Current Gain
hFE1 VCE = 5V, IC = 1A
8ââ
hFE2 VCE = 5V, IC = 8A
5 â 10
Diode Forward Voltage
VF
IEC = 10A
â â 2.0 V
FallTime
tf
IC = 6A, IB1 = 1.2A, IB2 = 2.4A â 0.1 0.3 µs
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese