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NTE2351 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington Power Amp, Switch
NTE2351 (NPN) & NTE2352 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Features:
D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A
D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut–Off Current
Emitter Cut–Off Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Switching Characteristics
ICBO
IEBO
V(BR)CEO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 3A
IC = 3A, IB = 6mA
IC = 3A, IB = 6mA
Turn–On Time
Storage Time
Fall Time
ton VCC = 30V, IB1 = –IB2 = 6mA,
tstg Duty Cycle ≤ 1%
tf
Min Typ Max Unit
– – 20 µA
– – 2.5 mA
80 – – V
2000 – –
1000 – –
– – 1.5 V
– – 2.0 V
– 0.2 – µs
– 1.5 – µs
– 0.6 – µs
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