NTE2347 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor General Purpose, Medium Power

NTE2347
Silicon NPN Transistor
General Purpose, Medium Power
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
Collector–Base Voltage (I_E = 0), V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Emitter Voltage (I_B = 0), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (I_C = 0), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation, P_tot
T_A ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
T_C ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
T_C ≤ +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Turn–On Time
Storage Time
Fall Time
I_CES V_CE = 150V, V_BE = 0
–
V_CE = 100V, V_BE = 0
–
V_CE = 100V, V_BE = 0, T_C = +150°C
–
I_EBO V_EB = 6V, I_C = 0
–
V_CEO(sus) I_C = 50mA, I_B = 0, Note 1
80
V_CE(sat) I_C = 5A, I_B = 500mA, Note 1
–
V_BE(sat) I_C = 5A, I_B = 500mA, Note 1
–
h_FE I_C = 2A, V_CE = 2V, Note 1
40
I_C = 2A, V_CE = 2V, T_C = –55°C, Note 1 15
f_T
I_C = 500mA, V_CE = 5V
50
C_CBO V_CB = 10V, I_E = 0, f = 1MHz
–
t_on V_CC = 20V, I_C = 500mA, I_B1 = 500mA –
t_s
V_CC = 20V, I_C = 5A, I_B1 = –I_B2 = 500mA –
t_f
–
– 1 mA
– 1 µA
– 100 µA
– 1 mA
––V
–1V
– 1.6 V
– 120
––
– – MHz
– 80 pF
– 0.35 µs
– 0.35 µs
– 0.3 µs
Note 1. Pulse Test: Pulse Duration = 300µs, Duty Cycle = 1.5%.