NTE2338 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode

NTE2338
Silicon NPN Transistor
Darlington Power Amp ^w/Internal
Damper & Zener Diode
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Turn–On Time
Turn–Off Time
V_(BR)CBO
V_(BR)EBO
I_CEO
h_FE
V_CE(sat)
V_BE(sat)
t_on
t_off
I_C = 0.1mA, I_E = 0
I_E = 50mA, I_C = 0
V_CE = 50V, R_BE = ∞
V_CE = 3V, I_C = 1A
I_C = 1A, I_B = 1mA
I_C = 1.5A, I_B = 1.5mA
I_C = 1A, I_B = 1mA
I_C = 1.5A, I_B = 1.5mA
I_C = 1A, I_B1 = –I_B2 = 1mA
Min Typ Max Unit
50 60 70 V
7
–
–
V
–
–
10 µA
2000 – 30000
–
–
1.5 V
–
–
2.0 V
–
–
2.0 V
–
–
2.5 V
– 0.5
–
µs
– 2.0
–
µs