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NTE233 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Video IF, Oscillator | |||
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NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Lead Temperature (During Soldering, 1/16â ±1/32â from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorâBase Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
30 â â V
EmitterâBase Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0
3ââ V
Collector Cutoff Current
ICBO VCB = 30V, IE = 0
â â 50 nA
ICEO VCE = 30V, IB = 0
â â 1 µA
DC Pulse Current Gain
hFE IC = 10mA, VCE = 10V, Note 1 20 â 100
Collector Saturation Voltage
VCE(sat) IC = 20mA, IB = 0.1mA, Note 1 â 0.6 â
V
CollectorâEmitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0, Note 1
30 â â V
Current GainâBandwidth Product
fT IC = 10mA, VCE = 10V,
f = 100MHz
300 â 700 MHz
Power Gain, Fixed Neutralization
Gpe IC = 10mA, VCE = 10V,
f = 45MHz
25 â â dB
Reverse Transfer Capacitance
Output Admittance, Input Short
Circuit
Cre IE = 0, VCB = 10V, f ⤠1MHz
goe IC = 10mA, VCE = 10V,
f = 45MHz
0.6 â 1.1 pF
30 â 200 µmho
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%.
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