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NTE2327 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch
NTE2327
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0, Peak value), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Collector–Emitter Voltage (Open base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Peak (tp = 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Reverse Base Current (Peak Value, Note 1), –IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Total Power Dissipation (TMB ≤ +60°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Note 1. Turn–Off current.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current (Note 2)
ICES VCEM = 1000V, VBE = 0
–
VCEM = 1000V, VBE = 0, TJ = +125°C –
Emitter Cutoff Current
IEBO IC = 0, VEB = 5V
–
DC Current Gain
hFE IC –= 50mA, VCE = 5V
–
Collector–Emitter Saturation Voltage VCE(sat) IC = 0.1A, IB = 10mA
–
– 100 µA
–
1 mA
–
1 mA
50 –
– 0.8 V
IC = 0.2A, IB = 20mA
–
– 1.0 V
Base–Emitter Saturation Voltage
Collector–Emitter Sustaining Voltage
Transition Frequency
Turn–On Time
Storage Time
Fall Time
VBE(sat)
VCEO(sus)
fT
ton
ts
tf
IC = 0.2A, IB = 20mA
IC = 100mA, IBoff = 0, L = 25mH
IC = 50mA, VCE = 10V, f = 1MHz
ICon = 0.2A, VCC = 250V,
IBon = 20mA, –IBoff = 40mA
–
– 1.0 V
450 –
–
V
– 20 – MHz
– 0.25 0.50 µs
– 2.0 3.5 µs
– 0.4 1.3 µs
Note 2. Measured with a half sine–wave voltage.
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