NTE2321 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Quad, General Purpose

NTE2321
Silicon NPN Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T_A = +25°C, Each Transistor), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2mW/°C
Total Device Dissipation (T_A = +25°C, Total Device), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.2mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
I_C = 10mA, I_B = 0, Note 1
I_C = 10µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 50V, I_E = 0
V_EB = 3V, I_E = 0
40 – – V
60 – – V
5–– V
– – 50 nA
– – 50 nA
DC Current Gain
Collector–Emitter Saturation Voltage
Small–Signal Characteristics
h_FE
V_CE(sat)
V_CE = 10V, I_C = 10mA
V_CE = 10V, I_C = 150mA
V_CE = 10V, I_C = 300mA
I_C = 150mA, I_B = 15mA
I_C = 300mA, I_B = 30mA
75 – –
100 – –
30 – –
– – 0.4 V
– – 1.6 V
Current Gain–Bandwidth Product
f_T
V_CE = 20V, I_C = 20mA, f = 100MHz, 200 350 – MHz
Note 1
Output Capacitance
Input Capacitance
C_obo
C_ibo
V_BE = 19V, I_E = 0, f = 1MHz
V_BE = 0.5V, I_C = 0, f = 1MHz
– 4.5 8.0 pF
– 17 30 pF
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.