NTE2315 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Fast Switching Power Darlington

NTE2315
Silicon NPN Transistor
Fast Switching Power Darlington
Description:
The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package
with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast
switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110°
CRT video displays and is primarily intended for large screen displays.
Absolute Maximum Ratings:
Collector–Base Voltage (I_E = 0), V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage (V_BE = –6V), V_CEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage (I_B = 0), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage (I_C = 0), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Damper Diode Peak Forward Current, I_DM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Power Dissipation (T_C ≤ +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperatuere Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
I_CES V_CE = 400V, V_BE = 0
I_CEV V_CE = 400V, V_BE = –6V
I_EBO V_EB = 6V, I_C = 0
V_CEO(sus) I_C = 100mA, I_B = 0, Note 1
V_CE(sat) I_C = 5A, I_B = 50mA, Note 1
V_BE(sat) I_C = 5A, I_B = 50mA, Note 1
h_FE I_C = 3A, V_CE = 5V
Note 1. Pulse test: Pulse Duration = 300µs, Duty Cycle = 1.5%.
Min Typ Max Unit
–
– 100 µA
–
– 100 µA
–
–
3 mA
200 –
–
V
–
– –1.5 V
–
– 2.0 V
– 3500 –