NTE2314 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304)

NTE2314
Silicon PNP Transistor
High Current, High Speed Switch
(Compl to NTE2304)
Description:
The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay
drivers, high–speed inverters, converters, and other general high–current switching applications.
Features:
D Low Collector–Emitter Saturation Voltage
D Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Allowable Collector Dissipation (T_C = +25°C ), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
I_CBO V_CB = 40V, I_E = 0
I_EBO V_EB = 4V, I_C = 0
h_FE V_CE = 2V, I_C = 1A
V_CE = 2V, I_C = 8A
f_T
V_CE = 5V, I_C = 1A
V_CE(sat) I_C = 8A, I_B = 0.4A
V_(BR)CBO I_C = 1mA, I_E = 0
V_(BR)CBO I_C = 1mA, R_BE = ∞
V_(BR)EBO I_E = 1mA, I_C = 0
t_on
10I_B1 = –10I_B2 = I_C = 2A,
t_stg
PW = 20µs
t_f
Min Typ Max Unit
–
– 0.1 mA
–
– 0.1 mA
100 – 200
30 –
–
– 20 – MHz
– 0.26 0.5 V
60 –
–
V
50 –
–
V
6
–
–
V
– 0.2 – µs
– 0.5 – µs
– 0.1 – µs