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NTE2304 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) | |||
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NTE2304
Silicon NPN Transistor
High Current, High Speed Switch
(Compl to NTE2314)
Description:
The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay
drivers, highâspeed inverters, converters, and other general highâcurrent switching applications.
Features:
D Low CollectorâEmitter Saturation Voltage
D Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
EmitterâBase voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Allowable Collector Dissipation (TC = +25°C ), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current GainâBandwidth Product
CollectorâEmitter Saturation Voltage
CollectorâBase Breakdown Voltage
CollectorâEmitter Breakdown Voltage
EmitterâBase Breakdown Voltage
TurnâOn Time
Storage Time
Fall Time
ICBO VCB = 40V, IE = 0
IEBO VEB = 4V, IC = 0
hFE VCE = 2V, IC = 1A
VCE = 2V, IC = 8A
fT
VCE = 5V, IC = 1A
VCE(sat) IC = 8A, IB = 0.4A
V(BR)CBO IC = 1mA, IE = 0
V(BR)CBO IC = 1mA, RBE = â
V(BR)EBO IE = 1mA, IC = 0
ton
10IB1 = â10IB2 = IC = 2A,
tstg
PW = 20µs
tf
Min Typ Max Unit
â
â 0.1 mA
â
â 0.1 mA
100 â 200
30 â
â
â 20 â MHz
â 0.18 0.4 V
60 â
â
V
50 â
â
V
6
â
â
V
â 0.2 â µs
â 1.0 â µs
â 0.1 â µs
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