NTE2302 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

NTE2302
Silicon NPN Transistor
Color TV Horizontal Deflection Output ^w/Damper Diode
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
D Capable of Being Mounted in a Variety of Methods
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Diode Forward Voltage
Fall Time
I_CBO V_CB = 800V, I_E = 0
I_EBO V_EB = 4V, I_C = 0
h_FE V_CE = 5V, I_C = 1A
f_T
V_CE = 10V, I_C = 1A
V_CE(sat) I_C = 4A, I_B = 0.8A
V_BE(sat) I_C = 4A, I_B = 0.8A
V_(BR)CBO I_C = 5mA, I_E = 0
V_(BR)CBO I_C = 100mA, R_BE = ∞
V_(BR)EBO I_E = 200mA, I_C = 0
V_F
I_EC = 5A
t_f
V_CC = 200V, I_C = 4A, I_B1 = 0.8A,
I_B2 = –1.6A, R_L = 50Ω
Min Typ Max Unit
–
– 10 µA
40 – 130 mA
8
–
–
–
3
– MHz
–
– 5.0 V
–
– 1.5 V
1500 –
–
V
800 –
–
V
7
–
–
V
–
–
2
V
–
– 0.7 µs