NTE23 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Ultra High Frequency Amp

NTE23
Silicon NPN Transistor
Ultra High Frequency Amp
Description:
The NTE23 is suitable for a low noise amplifier in the VHF to UHF band.
Features:
D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz
D High Power Gain: G_pe 15dB Typ. @ f = 500MHz
D High Cutoff Frequency: f_T = 2.0GHz Typ
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation, P_T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Junction Temperatur, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Maximum Available Power Gain
Noise Figure
I_CBO
I_EBO
h_FE
f_T
C_ob
G_pe
NF
V_CB = 15V, I_E = 0
V_EB = 2V, I_C = 0
V_CE = 10V, I_C = 10mA
V_CE = 10V, I_C = 10mA
V_CB = 10V, I_E = 0, f = 1MHz
V_CE = 10V, I_C = 10mA, f = 500MHz
V_CE = 10V, I_C = 3mA, f = 500MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
25 80 200 –
1.5 2.0 – GHz
– 0.75 1.1 pF
13 15 – dB
– 3.0 4.0 dB