NTE227 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp, Video Output

NTE227
Silicon NPN Transistor
High Voltage Amp, Video Output
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (T_A = +25°C), P_Dmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
Power Dissipation (T_{COLLECTOR LEAD} = +25°C), P_Dmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Maximum Operating Junction Temperature, T_Jmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Thermal Resistance, Junction–to–Case (T_{COLLECTOR LEAD} = +25°C), R_thJC . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Ambient (T_A = +25°C), R_thJA . . . . . . . . . . . . . . . . . . . . . . 147°C/W
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Base–Emitter Saturation Voltage
Capacitance
I_CBO V_CB = 260V
I_EBO V_EB = 6V
h_FE I_C = 1mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
V_(BR)CEO I_C = 1mA
V_(BR)CBO I_C = 100µA
V_(BR)EBO I_E = 10µA
V_CE(sat) I_C = 20mA, I_B = 2mA
V_BE(sat) I_C = 20mA, I_B = 2mA
f_T I_C = 10mA
V_BE(sat) I_C = 10mA
C_ib
Min Typ Max Unit
– – 100 nA
– – 100 nA
25 – –
40 90 200
300 – – V
300 – – V
6––V
– 0.25 1.0 V
– 0.74 1.0 V
50 – 200 MHz
– – 0.76 V
– – 70 pF