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NTE226 Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium PNP Transistor Audio Power Amp | |||
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NTE226
Germanium PNP Transistor
Audio Power Amp
Description:
The NTE226 is a Germanium PNP transistor in a TO66 type package designed for highâfidelity, highâ
power output applications.
Absolute Maximum Ratings:
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
CollectorâEmitter Voltage (RBE = 100â¦), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +85°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 25V, IE = 0
â â 200 µA
Emitter Cutoff Current
IEBO VEB = 6V, IC = 0
â â 200 µA
DC Current Gain
hFE VCE = 1.5V, IC = 200mA
50 100 275
SmallâSignal Current Gain Resistance fob VCE = 1.5V, IC = 200mA
â 0.7 â MHz
Base Spreading Resistance
rbb VCE = 1.5V, IC = 200mA, f = 6MHz â 15 â â¦
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