NTE22 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor AF PO, General Purpose Amp, Driver

NTE22
Silicon NPN Transistor
AF PO, General Purpose Amp, Driver
Features:
D High Breakdown Voltage: V_CEO = 80V
D Large I_C Capacity: I_C = 1A DC
D Good h_FE Linearity
D Low Collector Saturation Voltage
Applications:
D Medium Power Output Stages
D High–Voltage Drivers
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Junction Temperature, T_j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Note 1. P_W = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
V_(BR)CEO I_C = 1mA
V_(BR)CBO I_C = 50µA
V_(BR)EBO I_E = 50µA
I_CBO V_CB = 80V
I_EBO V_EB = 4V
h_FE V_CE = 3V, I_C = 50mA
V_CE(sat) I_C = 500A, I_B = 50mA
f_T
V_CE = 10V, I_C = 50mA
80 –
–
V
100 –
–
V
5
–
–
V
–
–
1 µA
–
–
1 µA
120 – 270
– 0.15 0.4 V
– 100 – MHz
Output Capacitance
C_ob V_CB = 10V, f = 1MHz
– 20 – pF