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NTE216 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switch, Core Driver
NTE216
Silicon NPN Transistor
High Speed Switch, Core Driver
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Maximum Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Capacitance
Turn–Off Time
ICBO VCB = 60V
hFE IC = 10mA, VCE = 1V
IC = 150mA, VCE = 1V
IC = 300mA, VCE = 1V
IC = 500mA, VCE = 1V
IC = 800mA, VCE = 2V
IC = 1A, VCE = 5V
VCE(sat) IC = 10mA
VBE(sat) IC = 10mA
Cob
toff VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
Min Typ Max Unit
– – 1.7 µA
30 – –
60 – 150
40 – –
35 – –
20 – –
25 – –
– – 0.25 V
– – 0.76 V
– – 10 pF
– – 60 ns
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