NTE214 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington Driver

NTE214
Silicon NPN Transistor
Darlington Driver
Description:
The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in-
clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Low Saturation Voltage
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector to Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector to Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter to Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Dissipation (T_A = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
I_CBO V_CB = 40V, I_E = 0
I_EBO V_EB = 5V, I_C = 0
h_FE V_CE = 2V, I_C = 5A
f_T
V_CE = 5V, I_C = 5A
V_CE(sat) I_C = 5A, I_B = 10mA
V_BE(sat) I_C = 5A, I_B = 10mA
V_(BR)CBO I_C = 5mA, I_E = 0
V_(BR)CEO I_C = 50mA, R_BE = ∞
t_on
V_CC = 20V, V_BE = –5V,
t_stg
500I_B1 = –500I_B2 = I_C = 5A,
PW = 50µs, Duty Cycle ≤ 1%
t_f
Min Typ Max Unit
–
– 0.1 mA
–
– 3.0 mA
2000 5000 –
– 20 – MHz
– 0.9 1.5 V
–
– 2.0 V
70 – – V
60 – – V
– 0.6 – µs
– 3.0 – µs
– 1.8 – µs