NTE2074 Datasheet, PDF (1/2 Pages) NTE Electronics – Integrated Circuit 7−Stage Darlington Transistor Array w/Clamp Diode

NTE2074
Integrated Circuit
7−Stage Darlington Transistor Array
w_{/Clamp Diode}
Description:
The NTE2074 is a 7−Channel sink driver that consists of 14NPN transitors connected to form seven
high current gain driver pairs.
Features:
• High output sustaining voltage to 40V
• High output sink current to 400mA
• Integral diodes for transient suppression
• PMOS compatible Input
• Wide operating temperature range (T_A = −20° to +75°C)
Absolute Maximum Ratings: (T_A = −20° to +75°C unless otherwise specified)
Output Sustaining Voltage (Transistor OFF), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V to +40V
Collector Current, I_C (Transistor ON₎ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Input Voltage, V_I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Clamp Diode Forward Current, I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Clamp Diode Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Power Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.47W
Operating Ambient Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20° to +75°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C
Recommended Operational Conditions: (T_A = −20° to +75°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Voltage
Collector Current
per Channel
V_O
0
I_C
Percent Duty Cycle Less than 8%
0
Percent Duty Cycle Less than 30% 0
− 40 V
− 400 mA
− 200 mA
“H” Input Voltage
“L” Input Voltage
V_IH I_C = 400mA
I_C = 200mA
V_IL
I_O(leak) = 50μA
8
− 35 V
5
− 35 V
0
− 0.5 V