NTE18 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage, High Current Capacity Driver

NTE18 (NPN) & NTE19 (PNP)
Silicon Complementary Transistors
High Voltage, High Current Capacity Driver
Applications:
D Drivers for Amplifiers of up to P_O = 60W
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C
Note 1. P_W = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V_(BR)CEO I_C = 2mA
V_(BR)CBO I_C = 50µA
V_(BR)EBO I_E = 50µA
I_CBO V_CB = 50V
I_EBO V_EB = 4V
DC Current Gain
h_FE V_CE = 3V, I_C = 100mA
Collector Saturation Voltage
Transition Frequency
NTE18
NTE19
V_CE(sat) I_C = 500mA, I_B = 50mA
f_T
V_CE = 10V, I_C = 50mA
Output Capacitance
NTE18
NTE19
C_ob V_CB = 10V, I_E = 0, f = 1MHz
Min Typ Max Unit
80 –
–
V
80 –
–
V
5
–
–
V
–
– 0.5 µA
–
– 0.5 µA
120 – 270
– 200 400 mV
– 120 – MHz
– 100 – MHz
– 10 – pF
– 14 20 pF