NTE177 Datasheet, PDF (1/2 Pages) NTE Electronics – General Purpose Silicon Rectifier

NTE177
General Purpose Silicon Rectifier
Description:
The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Peak Repetitive Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Forward DC Current, I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Average Forward Current, I_F(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, I_FRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA
Non–Repetitive Peak Forward Current, I_FSM
(t < 1s, T_J = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
(t =1µs, T_J = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (T_A = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Maximum Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . +375°C
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Instantaneous Forward Voltage Drop V_F I_F = 100mA
– – 1.0 V
Reverse Current
Breakdown Voltage
Diode Capacitance
Differential Forward Resistance
Reverse Recovery Time
I_F = 200mA
– – 1.25 V
I_R V_R = 150V
– – 100 nA
V_R = 150V, T_J = +150°C
– – 100 µA
V_(BR)R I_R = 100µA
200 – – V
C_d V_R = 0, f = 1MHz
– 1.5 5.0 pF
r_i
I_F = 10mA
–5 –Ω
t_r When switched from
– – 50 ns
I_F = 30mA to I_R = 30mA,
R_L = 100Ω, measured at I_R = 3mA