NTE172A Datasheet, PDF (1/3 Pages) NTE Electronics – Silicon NPN Transistor Darlington Preamp, Medium Speed Switch

NTE172A
Silicon NPN Transistor
Darlington Preamp, Medium Speed Switch
Description:
The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier
input stages requiring input impedances of several megohms or extremely low level, high gain, low
noise amplifier applications.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max.), T_L . . . . . . . . +260°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 0.1µA, I_E = 0
40 –
–
V
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA, I_B = 0
40 –
–
V
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 0.1µA, I_E = 0
12 –
–
V
DC Current Gain
h_FE V_CE = 5V, I_C = 2mA
7000 – 70000
V_CE = 5V, I_C = 100mA
20000 –
–
Collector Cutoff Current
I_CBO V_CB = 40V, I_E = 0
–
– 100
nA
V_CB = 40V, I_E = 0, T_A = +100°C
–
– 20
µA