NTE165 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor TV Horizontal Output

NTE165
Silicon NPN Transistor
TV Horizontal Output
Description:
The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal
output applications.
Features:
D High Voltage
D High Power
D High Switching Speed
D Good Stability
Applications:
D Consumer
D Power Supply
D Color TV Horizontal Deflection
Absolute Maximum Ratings:
Collector–Emitter Voltage (V_BE = 0), V_CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage (I_B = 0), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage (I_C = 0), V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (t_p < 5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (T_C = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Maximum Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Maximum Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I_CES V_CE = 1500V, V_BE = 0
–
– 1.0 mA
V_CE = 1500V, V_BE = 0, T_C = +125°C –
– 2.0 mA
Emitter Cutoff Current
I_EBO V_EB = 5V, I_C = 0
–
– 100 µA
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 100mA
700 –
–
V
Emitter–Base Voltage
V_EBO I_E = 10mA, I_C = 0
10 –
–
V
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 1.5%.