NTE164 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor TV Vertical Output

NTE164
Silicon NPN Transistor
TV Vertical Output
Description:
The NTE164 is a high voltage silicon NPN transistor in a TO3 type package designed for color TV
vertical output applications.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, V_CER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Emitter Current, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Maximum Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Capacitance
Fall Time
I_CBO V_CB = 500V, I_E = 0
I_EBO V_EB = 5V, I_C = 0
h_FE V_CE = 15V, I_C = 2A
V_CE(sat) I_C = 2A, I_B = 0.6A
V_BE(sat) I_C = 2A, I_B = 0.6A
f_T V_CE = 10V, I_C = 0.1A
C_ob V_CB = 10V, I_E = 0, f = 1MHz
t_f I_CP = 2A, I_B1 = 0.6A
Min Typ Max Unit
– – 10 µA
– – 5 µA
5 20 –
– 5.0 8.5 V
– – 1.5 V
– 3 – MHz
– 95 – pF
– 0.5 1.0 µs