NTE162 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor TV Vertical Deflection

NTE162
Silicon NPN Transistor
TV Vertical Deflection
Description:
The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters,
converters, regulators, and switching circuits.
Features:
D High Voltage: V_CEX = 400V
D Gain Specified to 3.5A
D High Frequency Response to 2.5MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
V_(BR)CEO(sus) I_C = 100mA, I_B = 0, Note 1
I_CEX
V_CE = 400V, V_EB(off) = 1.5V
V_CE = 400V, V_EB(off) = 1.5V,
T_C = +125°C
I_EBO
V_BE = 5V, I_C = 0
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
325 – – V
– – 2.5 mA
– – 1.0 mA
– – 2.0 mA