NTE16006 Datasheet, PDF (1/4 Pages) NTE Electronics – Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain

NTE16006
Silicon NPN Transistor
Low Frequency Output Amp
w_{/High Current Gain}
Features:
D High DC Current Gain
D Low Collector–Emitter Saturation Voltage
D An M type mold package that allows easy manual and automatic insertion. Can be firmly
mounted flush to PCB surface
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (Note 1), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm² in area.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cut–Off Current
Collector–Base Voltage
I_CBO
I_CEO
V_CBO
V_CB = 15V, I_E = 0
V_CE = 15V, I_B = 0
I_C = 10µA, I_E = 0
Collector–Emitter Voltage
Emitter–Base Voltage
DC Current Gain
V_CEO
V_EBO
h_FE
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 150mA, Note 2
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 500mA, I_B = 50mA, Note 2
Transition Frequency
Collector Output Capacitance
f_T V_CB = 20V, I_E = –20mA, f = 200MHz
C_ob V_CB = 10 V, I_E = 0, f = 1MHz
Min Typ Max Unit
–
–
1 µA
–
– 10 µA
20 –
–
V
20 –
–
V
15 –
–
V
1000 – 2500 –
–
– 0.4 V
– 55 – MHz
– 11 15 pF
Note 2. Pulse Measurement