NTE16004 Datasheet, PDF (1/4 Pages) NTE Electronics – Silicon Complementary Transistors High Current, General Purpose

NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
High Current, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V_(BR)CEO) I_C = 100mA, I_B = 0
I_CEX V_CE = 100V, V_BE = 1.5V
V_CE = 70V, V_BE = 1.5V, T_C = +150°C
I_EBO V_BE = 7V, I_C = 0
DC Current Gain
Collector–Emitter Saturation Voltage
NTE16004
NTE16005
h_FE
V_CE(sat)
I_C = 500mA, V_CE = 4V
I_C = 1A, V_CE = 2V
I_C = 500mA, I_B = 50mA
Base–Emitter ON Voltage
Small–Signal Characteristics
V_BE(on) I_C = 500mA, V_CE = 4V
Small–Signal Current Gain
h_fe I_C = 50mA, V_CE = 4V, f = 10MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
75 –
–
V
–
– 0.1 mA
–
– 5.0 mA
–
– 0.1 mA
30 – 130
10 –
–
–
– 0.7 V
–
– 0.5 V
–
– 1.1 V
5
–
–