NTE16003 Datasheet, PDF (1/4 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz

NTE16003
Silicon NPN Transistor
RF Power Output, P_O = 7W, 175MHz
Description:
The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode
design. This feature together with a heavily diffused base matrix located between the individual emit-
ters results in high RF current handling capability, high power gain, low base resistance, and low out-
put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli-
er circuits and is specifically designed for operation in the VHF–UHF region.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I_C (max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.4mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I_CEO V_CE = 30V, I_B = 0
– – 0.1 mA
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 0.1mA, I_E = 0
65 – – V
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 0.1mA, I_C = 0
4––V
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 0 to 200mA, I_B = 0, Note 1 40 – – V
Collector–Emitter Breakdown Voltage V_(BR)CEV I_C = 0 to 200mA, V_BE = –1.5V, 65 –
–
V
Note 1
Output Capacitance
Current Gain–Bandwidth Product
C_ob V_CB = 30V, I_C = 0, f = 1MHz
f_T V_CE = 28V, I_C = 150mA,
f = 100MHz
– – 10 pF
– 500 – MHz
RF Power Output, Class C,
Unneutralized
P_out f = 175MHz, V_CE = 28V,
P_IN = 1W
3 – –W
Note 1. Pulsed through 25mH inductor, Duty Factor = 50%