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NTE16002 Datasheet, PDF (1/4 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
NTE16002
Silicon NPN Transistor
RF Power Output, PO = 13.5W, 175MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
V(BR)CEO(sus) IC = 200mA, IB = 0, Note 1
V(BR)EBO IE = 0.25mA, IC = 0
ICEO
VCE = 30V, IB = 0
ICEX
VCE = 30V, VBE(off) = 1.5V,
TC = +200°C
VCE = 65V, VBE(off) = 1.5V
ICBO
VCB = 65V, IE = 0
IEBO
VBE = 4V, IC = 0
40 – – V
4––V
– – 0.25 mA
– – 10 mA
– – 5 mA
– – 1 mA
– – 0.25 mA
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 5V, IC = 1A
IC = 500mA, IB = 100mA
IC = 1A, IB = 5A
5––
– – 1.0 V
– – 1.5 V
Current Gain–Bandwidth Product
Output Capacitance
fT
VCE = 28V, IC = 150mA, f = 100MHz – 400 – MHz
Cob
VCB = 30V, IE = 0, f = 100kHz
– 16 20 pF
Note 1. Pulsed through 25mH inductor.
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