NTE16001 Datasheet, PDF (1/4 Pages) NTE Electronics – Silicon NPN Transistor Video IF Amp

NTE16001
Silicon NPN Transistor
Video IF Amp
Features:
D High Transistion Frequency
D Good Linearity of DC Current Gain
D An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly
Mounted Flush to PC Board Surface.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
DC Current Gain
Collector–Emitter Saturation Volatge
Transistion Frequency
I_CEO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CB = 10V, I_E = –10mA
I_C = 20mA, I_B = 2mA
V_CB = 10V, I_E = –10mA, f =
100MHz
– – 10 µA
45 – – V
35 – – V
4––V
20 50 100
– – 0.5 V
300 500 – MHz
Small–Signal Reverse Transfer Capaci-
tance
C_re V_CE = 10V, I_C = 1mA
– – 1.5 pF
Power Gain
PG V_CB = 10V, I_E = –10mA, f = 58MHz – 18 – dB