NTE160 Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium PNP Transistor RF-IF Amp, FM Mixer OSC

NTE160
Germanium PNP Transistor
RF–IF Amp, FM Mixer OSC
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V_BE = 0), V_CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, (I_B = 0), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage (I_C = 0), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Power Dissipation (T_A = +45°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +75°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W max
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750°C/W max
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Collector Cutoff Current
Emitter Cutoff Current
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Noise Figure
I_CES
I_CEO
I_EBO
V_BE
h_FE
f_T
–C_re
NF
V_CE = –20V, V_BE = 0
–
V_CE = –15V, I_B = 0
–
V_EB = –0.3V, I_C = 0
–
I_C = –2mA, V_CE = –10V
–
I_C = –5mA, V_CE = –5V
–
I_C = –2mA, V_CE = –10V
–
I_C = –5mA, V_CE = –5V
–
I_C = –2mA, V_CE = –10V, f = 100MHz –
I_C = –2mA, V_CE = –10V, f = 450kHz –
I_C = –2mA, V_CE = –10V, R_g = 60Ω, –
f = 800MHz
Power Gain
G_pb I_C = –2mA, V_CE = –10V, R_L = 2kΩ, 11
f = 800MHz
Typ
–
–
–
–350
–400
50
42
700
0.23
5
14
Max
–8
–500
–100
–
–
–
–
–
–
6
Unit
µA
µA
µA
mV
mV
MHz
pF
dB
– dB