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NTE154 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Video Output
NTE154
Silicon NPN Transistor
High Voltage Video Output
Description:
The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output
to drive a color CRT.
Features:
D High Voltage: VCEO = 300V Min @ IC = 5mA
D Low Capacitance: Cob = 3pF Max @ VCB = 20V
D High Frequency: ft = 50MHz Min @ IC = 15mA
D High Power Dissipation: PD = 7W @ TC = +25°C
Absolute Maximum Ratings: (Note 1)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector to Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Total Power Dissipation (Note 3, Note 4), PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Lead Temperature (During Soldering, 60sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. These ratings are limiting values above which the serviceability of this device may be impaired.
Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 3. These ratings are steady state limits.
Note 4. These ratings give a maximum junction temperature of +200°C and junction to case thermal
resistance of +25°C/W (derating factor of 40mW/°C); junction to ambient thermal resistance
of +175°C/W (derating factor of 5.71mW/°C).
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