NTE152 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Amplifier, Switch

NTE152 (NPN) & NTE153 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.
Features:
D Good Linearity of h_FE
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –4A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h_FE) matched to within
10% of each other.
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (h_FE) matched to within 10% of each other.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CEO I_C = 50mA, I_B = 0
90
I_CBO V_CB = 90V, I_E = 0
–
I_EBO V_EB = 5V, I_C = 0
–
h_FE1 V_CE = 5V, I_C = 0.5A
40
h_FE2 V_CE = 5V, I_C = 3A
15
V_CE(sat) I_C = 3A, I_B = 0.3A
–
V_BE V_CE = 5V, I_C = 3A
–
f_T V_CE = 5V, I_C = 0.5A
3
C_ob V_CB = 10V, I_E = 0, f = 1MHz –
––V
– 20 µA
– 10 µA
– 200
––
– 1.5 V
– 1.5 V
8 – MHz
85 – pF