NTE14 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor High Power, Low Frequency Driver

NTE14
Silicon PNP Transistor
High Power, Low Frequency Driver
Features:
D High Power Compact FTR Package: P_C = 750mW
D High Breakdown Voltage: V_CEO = 80V
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Collector Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
V_(BR)CEO I_C = 2mA
80 – – V
V_(BR)CBO I_C = 50µA
80 – – V
V_(BR)EBO I_E = 50µA
5––V
I_CBO V_CB = 50V
– – 0.5 µA
I_EBO V_EB = 4V
– – 0.5 µA
h_FE V_CE = 3V, I_C = 100mA
120 – 270 –
V_CE(sat) I_C = 500mA, I_B = 50mA
– 0.2 0.4 V
f_T V_CE = 10V, I_E = 50mA
– 100 – MHz
C_ob V_CB = 10V, I_E = 0, f = 1MHz – 14 20 pF