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NTE133 Datasheet, PDF (1/2 Pages) NTE Electronics – N.Channel JFET Silicon Transistor General Purpose AF Amplifier | |||
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NTE133
NâChannel JFET Silicon Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
DrainâSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
DrainâGate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
GateâSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â25V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Lead Temperature (During Soldering, 1/16â from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
GateâSource Breakdown Voltage
Gate Reverse Current
GateâSource Cutoff Voltage
GateâSource Voltage
ZeroâGateâVoltage Drain Current
Forward Transfer Admittance
V(BR)GSS IG = 1µA, VDS = 0
IGSS VGS = 20V, VDS = 0
VGS = 20V, VDS = 0, TA = +150°C
VGS(off) ID = 1µA, VDS = 15V
VGS ID = 50µA, VDS = 15V
IDSS VDS = 15V, VGS = 0
|yfs| VDS = 15V, VGS = 0, f = 1kHz
Min Typ Max Unit
â25 â â
V
â â â1 nA
â
â â1 µA
â â â6.5 V
â0.4 â â6.0 V
0.5 â 15 mA
1000 â 7500 µmho
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