NTE132 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon N-Channel JFET Transistor VHF Amplifier, Mixer

NTE132
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25V
Gate Current, I_G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T_A = 25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case for 10sec), T_L . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
Zero–Gate–Voltage Drain Current
Forward Transconductance
Forward Transfer Admittance
Output Admittance
V_(BR)GSS I_G = 1µA, V_DS = 0
I_GSS V_GS = 15V, V_DS = 0
V_GS = 15V, V_DS = 0, T_A = +100°C
V_GS(off) I_D = 2nA, V_DS = 15V
V_GS I_D = 50µA, V_DS = 15V
I_DSS V_DS = 15V, V_GS = 0
g_fs V_DS = 15V, V_GS = 0, f = 1kHz
|y_fs| V_DS = 15V, V_GS = 0, f = 100MHz
|y_os| V_DS = 15V, V_GS = 0, f = 1kHz
Min Typ Max Unit
–25 – –
V
– – –2 nA
– – –2 nA
– – –8 V
–0.5 – –7.5 V
2 – 20 mA
2500 – 7000 µmho
2000 – – µmho
–
– 50 µmho