NTE13 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Low Voltage Output Amp

NTE13
Silicon NPN Transistor
Low Voltage Output Amp
Features:
D Low Collector–Emitter Saturation Voltage
D High DC Current Gain
D An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by
Taping and Magazine Packaging
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transistion Frequency
Collector Capaciatnce
I_CBO V_CB = 25V, I_C = 0
V_CBO I_C = 10µA, I_E = 0
V_CEO I_C = 1mA, I_B = 0
V_EBO I_E = 10µA, I_C = 0
h_FE V_CE = 2V, I_C = 500mA, Note 1
V_CE = 2V, I_C = 1A, Note 1
V_CE(sat) I_C = 500mA, I_B = 20mA
V_BE(sat) I_C = 500mA, I_B = 50mA
f_T V_CB = 10V, –I_E = 50mA
C_ob V_CB = 10V, I_E = 0, f = 1MHz
Note 1. Pulse Test
Min Typ Max Unit
– – 100 nA
25 – – V
20 – – V
12 – – V
400 – 800
60 – –
– 0.13 0.4 V
– – 1.2 V
– 200 – MHz
– 10 – pF