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NTE127 Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium PNP Transistor Horizontal Output Amplifier
NTE127
Germanium PNP Transistor
Horizontal Output Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320V
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4, –1A
Power Dissipation (TMF ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature Range, TJ(opr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +85°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +230°C
Electrical Characteristics:
Parameter
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Collector–Emitter Saturation Voltage
DC Current Gain
Base–Emitter Voltage
Turn–Off Time
Symbol
Test Conditions
V(BR)CES IC = 0.025A, VEB = 0
V(BR)EBO IE = 100mA, IC = 0
ICBO VCB = 10V, IE = 0
VCE(sat) IC = 6A, IB = 400mA
IC = 3A, IB = 200mA
hFE VCE = 3V, IC = 6A
VBE IC = 6A, IB = 400mA
ts + tf
Min Typ Max Unit
320 – – V
2––V
– – 200 µA
– – 1.5 V
– – 1.5 V
15 – –
– 0.8 – V
– – 1.2 µs
Note 1. This device is for replacement only and NOT intended for new design. Therefore, these
specifications are for reference only and strictly for determining the suitability of this device
as a replacement in a working circuit.
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