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NTE126 Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium Mesa Transistor, PNP, for High-Speed Switching Applications | |||
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NTE126
Germanium Mesa Transistor, PNP,
for HighâSpeed Switching Applications
Maximum Ratings:
CollectorâEmitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
CollectorâBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
EmitterâBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +100°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +100°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol Min Max Unit
CollectorâBase Breakdown Voltage
(IC = 100µAdc, IE = 0)
BVCBO
Vdc
15 â
EmitterâBase Breakdown Voltage
(IE = 100µAdc, IC = 0)
CollectorâLatchâUp Voltage
(VCC = 11.5 Vdc)
CollectorâEmitter Cutoff Current
(VCE = 15Vdc)
CollectorâBase Cutoff Current
(VCB = 6Vdc, IE = 0)
BVEBO
LVCEX
ICES
ICBO
Vdc
2.5 â
Vdc
11.5 â
µAdc
â 100
µAdc
â 3.0
DC Current Gain
(IC = 10mAdc, VCE = 0.3Vdc)
(IC = 50mAdc, VCE = 1Vdc)
(IC = 100mAdc, VCE = 1Vdc)
hFE
â
40 â
40 â
40 â
CollectorâEmitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
VCE(sat)
Vdc
â 0.18
â 0.35
â 0.60
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