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NTE123AP Datasheet, PDF (1/3 Pages) NTE Electronics – Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159) | |||
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NTE123AP
Silicon NPN Transistor
Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorâBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterâBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Thermal Resistance, Junction to Case, RθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction to Ambient, RθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorâEmitter Breakdown Voltage
CollectorâBase Breakdown Voltage
EmitterâBase Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO IC = 1mA, IB = 0, Note 1
V(BR)CBO IC = 0.1mA, IE = 0
V(BR)EBO IE = 0.1mA, IC = 0
ICEV VCE = 35V, VEB(off) = 0.4V
IBEV VCE = 35V, VEB(off) = 0.4V
DC Current Gain
hFE VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
VCE = 1V, IC = 500mA
Note 1. Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2%.
Min Typ Max Unit
40 â â
V
60 â â
V
6ââ
V
â â 0.1 µA
â â 0.1 µA
20 â â
40 â â
80 â â
100 â 300
40 â â
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