NTE112 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Small Signal Schottky Diode

NTE112
Silicon Small Signal Schottky Diode
Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Continuous Current (T_A = +25°C, Note 1), I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Surge Non–Repetitive Forward Current (t_p ≤ 1s, Note 1), I_FSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°
Thermal Resistance, Junction–to–Ambient (Note 1), R_{th (j–a)} . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), T_L . . . . . . . . . . +230°C
Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Breakdown Voltage
Forward Voltage Drop
Reverse Current
Dynamic Characteristics
V_(BR)
V_F
I_R
I_R = 100µA
I_F = 10mA, Note 2
V_R = 1V, Note 2
Capacitance
Stored Charge
Frequency
C V_R = 0V, f = 1MHz
Q_S I_F = 10mA, Note 3
F f = 1GHz, Note 4
Min Typ Max Unit
5––V
– – 0.55 V
– – 0.05 µA
– – 1 pF
– – 3 pC
– 6 7 dB
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle < 2%.
Note 3. Measured on a B–line Electronics QS–3 stored charge meter.
Note 4. Noise Figure Test: – Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.