NTE108 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Frequency Amplifier

NTE108
Silicon NPN Transistor
High Frequency Amplifier
Description:
The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency
amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise
and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W
Note 1. R_ΘJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_(BR)CEO I_C = 3mA, I_B = 0, Note 2
V_(BR)CBO I_C = 1µA, I_E = 0
V_(BR)EBO I_E = 10µA, I_C = 0
I_CBO V_CB = 15V, I_E = 0
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
Min Typ Max Unit
15 – – V
30 – – V
3––V
– – 10 nA