NTE107 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor UHF Oscillator for Tuner

NTE107
Silicon NPN Transistor
UHF Oscillator for Tuner
Description:
The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (T_A = +25°C), P_T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Lead temperature (During Soldering, 1/16” ±1/32” from case, 10sec), T_L . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector Saturation Voltage
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
I_C = 100µA
I_CEO = 3mA, Note 1
I_E = 100µA
V_CB = 15V, I_E = 0
V_EB = 2V, I_C = 0
V_CE = 10V, I_C = 8mA
I_C = 10mA, I_B = 1mA
Note 1. Pulse test: Pulse Width = 1µs, Duty Cycle = 1%.
Min Typ Max Unit
30 – – V
12 – – V
3– – V
– – 0.5 µA
– – 0.5 µA
20 75 –
– – 0.6 V