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NTE106 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor Switching Transistor
NTE106
Silicon PNP Transistor
Switching Transistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.36W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.06mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.9mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Base Current
ON Characteristics
V(BR)CEO IC = 3mA, IB = 0, Note 1
V(BR)CES IC = 100µA, VBE = 0
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO IE = 100µA, IC = 0
ICES VCE = 8V, VBE = 0
VCE = 8V, VBE = 0, TA = +125°C
IB
VCE = 8V, VBE = 0
15 – – V
15 – – V
15 – – V
4.5 5.9 – V
– – 10 nA
– – 5 µA
– – 1 nA
DC Current Gain
hFE IC = 1mA, VCE = 500mV
35 – –
IC = 10mA, VCE = 300mV
50 – 120
IC = 10mA, VCE = 300mV, TA = –55°C 20 – –
IC = 50mA, VCE = 1V, Note 1
40 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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