NTE102A Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium Complementary Transistors Medium Power Amplifier

NTE102A (PNP) & NTE103A (NPN)
Germanium Complementary Transistors
Medium Power Amplifier
Description:
The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Voltage
Collector Cutoff Current
DC Current Gain
Common–Emitter Cutoff Frequency
Collector–Emitter Saturation Voltage
Noise Figure
V_CBO
I_CBO
h_FE1
h_FE2
f_αe
V_CE(sat)
NF
I_C = 200µA, I_E = 0
V_CB = 10V, I_E = 0
V_CB = 0, I_E = 50mA
V_CB = 0, I_E = 300mA
V_CB = 2V, I_E = 10mA
I_C = 500mA, I_B = 50mA
V_CB = 5V, I_E = 5mA, f = 1kHz
Min Typ Max Unit
32 – – V
– – 25 µA
63 – 295
69 – 273
10 – – kHz
– 0.17 – V
– – 25 dB