|
NTE102 Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium Complementary Transistors Power Output, Driver | |||
|
NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
diumâspeed saturated switching applications.
Features:
D Low CollectorâEmitter Saturation Voltage:
VCE(sat) = 200mV Max @ IC = 24mA
D High EmitterâBase Breakdown Voltage:
V(BR)EBO = 12V Min @ IE = 20µA
Absolute Maximum Ratings:
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
CollectorâEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +100°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +100°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorâBase Breakdown Voltage
EmitterâBase Breakdown Voltage
V(BR)CBO IC = 20µA, IE = 0
V(BR)EBO IE = 20µA, IC = 0
PunchâThrough Voltage
Collector Cutoff Current
Emitter Cutoff Current
VPT
ICBO
IEBO
VEBfl = 1V, Note 1
VCB = 12V, IE = 0
VCB = 12V, IE = 0, TA = +80°C
VEB = 2.5V, IC = 0
Min Typ Max Unit
25 â
â
V
12 â
â
V
24 â
â
V
â 0.8 5.0 µA
â 20 90 µA
â 0.5 2.5 µA
Note 1. VPT is determined by measuring the EmitterâBase floating potential VEBfl, using a voltmeter
with 11M⦠minimum input impedance. The CollectorâBase Voltage, VCB, is increased until
VEBfl = 1V; this value of VCB = (VPT + 1).
|
▷ |