NTE10 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier

NTE10
Silicon NPN Transistor
UHF Low Noise Wide–Band Amplifier
Features:
D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
D High Power Gain: MAG = 14dB Typ (f = 0.9GHz)
D High Cutoff Frequency: f_T = 5GHz Typ
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, V_CER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mA
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Collector Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Junction Temperature, T_j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I_CBO V_CB = 12V, I_E = 0
– – 1.0 µA
Emitter Cutoff Current
I_EBO V_EB = 2V, I_C = 0
– – 10 µA
DC Current Gain
h_FE V_CE = 10V, I_C = 20mA
40 – 200
Gain–Bandwidth Product
f_T V_CE = 10V, I_C = 20mA
– 5.0 – GHz
Output Capacitance
C_ob V_CB = 10V, f = 1MHz
– 0.8 1.1 pF
Reverse Transfer Capacitance
C_re V_CB = 10V, f = 1MHz
– 0.5 – pF
Forward Transfer Gain
|S_21e|² V_CE = 10V, I_C = 20mA, f = 0.9GHz 8 10 – dB
Maximum Available Power Gain MAG V_CE = 10V, I_C = 5mA, f = 0.9GHz – 14 – dB
Noise Figure
NF V_CE = 10V, I_C = 5mA, f = 0.9GHz – 2.2 4.5 dB