DS25BR400_08 Datasheet, PDF (8/14 Pages) National Semiconductor (TI) – Quad 2.5 Gbps CML Transceiver with Transmit De-Emphasis and Receive Equalization

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Ratings (Note 9)
HBM
CDM
MM
6kV
1kV
350V
Supply Voltage (V_CC)
CMOS/TTL Input Voltage
CML Input/Output Voltage
Junction Temperature
Storage Temperature
Lead Temperature
Soldering, 4 sec
Thermal Resistance, θ_JA
Thermal Resistance, θ_JC
Thermal Resistance, Φ_JB
−0.3V to 4V
−0.3V to (V_CC +0.3V)
−0.3V to (V_CC +0.3V)
+150°C
−65°C to +150°C
+260°C
22.3°C/W
3.2°C/W
10.3°C/W
Recommended Operating Ratings
Supply Voltage (V_CC-GND)
Supply Noise Amplitude
10 Hz to 2 GHz
Ambient Temperature
Case Temperature
Min Typ Max Units
3.135 3.3 3.465 V
100 mV_PP
−40
+85 °C
100 °C
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
LVCMOS DC SPECIFICATIONS
V_IH
High Level Input
Voltage
V_IL
Low Level Input
Voltage
I_IH
High Level Input
V_IN = V_CC
Current
I_IL
Low Level Input Current V_IN = GND
R_PU
Pull-High Resistance
RECEIVER SPECIFICATIONS
V_ID
Differential Input
AC Coupled Differential Signal.
Voltage Range
Below 1.25 Gb/s
At 1.25 Gbps–3.125 Gbps
Above 3.125 Gbps
This parameter is not production tested.
V_ICM
R_ITD
Common Mode Voltage Measured at receiver inputs reference to ground.
at Receiver Inputs
Input Differential
On-chip differential termination between
Termination
IN+ or IN−. Figure 7
Min
2.0
−0.3
−10
75
 
100
100
100
 
84
Typ
(Note 2)
Max
Units
V_CC +0.3
V
0.8
V
10
µA
94
124
µA
35
kΩ
 
1750
1560
1200
 
 
mV_P-P
mV_P-P
mV_P-P
 
1.3
V
100
116
Ω
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