LM4050 Datasheet, PDF (7/15 Pages) National Semiconductor (TI) – Precision Micropower Shunt Voltage Reference

LM4050-8.2
Electrical Characteristics
Boldface limits apply for T_A = T_J = T_MIN to T_MAX; all other limits T_A = T_J = 25˚C. The grades A, B and C designate initial
Reverse Breakdown Voltage tolerances of ±0.1% and ±0.2% and 0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4050AIM3 LM4050BIM3 LM4050CIM3
LM4050AEM3 LM4050BEM3 LM4050CEM3
Limits
Limits
Limits
(Note 5)
(Note 5)
(Note 5)
Units
(Limit)
V_R
Reverse Breakdown Voltage
I_R = 150 µA
8.192
V
Reverse Breakdown Voltage
Tolerance (Note 6)
I_R = 150 µA
Industrial Temp. Range
±8.2
±16
±41
mV (max)
±35
±43
±68
mV (max)
Extended Temp. Range
±49
±57
±82
mV (max)
I_RMIN
Minimum Operating Current
74
µA
91
91
91
µA (max)
Industrial Temp. Range
95
95
95
µA (max)
Extended Temp. Range
100
100
100
µA (max)
∆V_R/∆T
Average Reverse Breakdown
Voltage Temperature Coefficient
(Note 6)
I_R = 10 mA
I_R = 1 mA
I_R = 150 µA
±40
ppm/˚C
±20
ppm/˚C
±20
±50
±50
±50
ppm/˚C (max)
∆V_R/∆I_R
Reverse Breakdown Voltage
Change with Operating Current
Change (Note 7)
I_RMIN ≤ I_R ≤ 1 mA
0.6
mV
1.3
1.3
1.3
mV (max)
2.5
2.5
2.5
mV (max)
1 mA ≤ I_R ≤ 15 mA
7.0
10.0
10.0
mV
10.0
mV (max)
18.0
18.0
18.0
mV (max)
Z_R
Reverse Dynamic Impedance
I_R = 1 mA, f = 120 Hz,
0.6
I_AC = 0.1 I_R
e_N
Wideband Noise
I_R = 150 µA
150
10 Hz ≤ f ≤ 10 kHz
∆V_R
Reverse Breakdown Voltage
t = 1000 hrs
Long Term Stability
T = 25˚C ±0.1˚C
120
Ω
µV_rms
ppm
I_R = 150 µA
V_HYST
Thermal Hysteresis
(Note 8)
∆T = −40˚C to 125˚C
2.3
mV
7
www.national.com